kw.\*:("Aluminium Antimonides")
Results 1 to 25 of 673
Selection :
2Eg transitions in GaSb-AlSb quantum-well structuresFORCHEL, A; CEBULLA, U; TRÄNKLE, G et al.Physical review letters. 1986, Vol 57, Num 25, pp 3217-3220, issn 0031-9007Article
Infrared reflectivity of strained GaSb/AlSb superlatticesSCAMARCIO, G; GADALETA, C; TAGLIENTE, A et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 625-628, issn 0038-1101Conference Paper
p-channel modulation-doped GaSb field-effect transistorsLUO, L. F; LONGENBACH, K. F; WANG, W. I et al.Electronics Letters. 1991, Vol 27, Num 5, pp 472-474, issn 0013-5194, 3 p.Article
Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressureLEFEBVRE, P; GIL, B; ALLEGRE, J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1230-1235, issn 0163-1829Article
Light and heavy valence subband reversal in GaSb-AlSb superlatticesVOISIN, P; DELALANDE, C; VOOS, M et al.Physical review. B, Condensed matter. 1984, Vol 30, Num 4, pp 2276-2278, issn 0163-1829Article
Raman resonance on E1 edges in superlatticesTEJEDOR, C; CALLEJA, J. M; MESEGUER, F et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 8, pp 5303-5311, issn 0163-1829Article
GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescenceGRIFFITHS, G; MOHOMMED, K; SUBBANA, S et al.Applied physics letters. 1983, Vol 43, Num 11, pp 1059-1061, issn 0003-6951Article
Optical investigations of a GaSb-AlSb single quantum wellRAISIN, C; LASSABATERE, L; ALLIBERT, C et al.Solid state communications. 1987, Vol 61, Num 1, pp 17-19, issn 0038-1098Article
Free-exciton luminescence in GaSb quantum wells confined by short-period AlSb-GaSb superlatticesPLOOG, K; OHMORI, Y; OKAMOTO, H et al.Applied physics letters. 1985, Vol 47, Num 4, pp 384-386, issn 0003-6951Article
Electron transport in indium doped AlSb filmsSINGH, T; BEDI, R. K.SPIE proceedings series. 1998, pp 365-368, isbn 0-8194-2756-X, 2VolConference Paper
Raman scattering in GaSb-AlSb strained layer superlaticesJUSSERAND, B; VOISIN, P; VOOS, M et al.Applied physics letters. 1985, Vol 46, Num 7, pp 678-680, issn 0003-6951Article
X-RAY DIFFRACTION DATA FROM THE HIGH PRESSURE PHASE OF ALSBBAUBLITZ M JR; RUOFF AL.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 4; PP. 2109-2110; BIBL. 11 REF.Article
Anti-crossing behavior of local vibrational modes in AlSbMCCLUSKEY, M. D; HALLER, E. E; WALUKIEWICZ, W et al.Solid state communications. 1998, Vol 106, Num 9, pp 587-590, issn 0038-1098Article
Calcul des paramètres d'interaction dans les systèmes quasibinaires à base de germanium et de siliciumKORENCHUK, N. M; PRACH, P. I; TISHCHENKO, I. A et al.Žurnal fizičeskoj himii. 1989, Vol 63, Num 4, pp 1107-1109, issn 0044-4537Article
Strain accommodation in GaSb/AlSb superlattices on (001) GaSb substrates with AlSb buffersVILLAFLOR, A. B; YOSHIZAWA, M; KIMATA, M et al.Japanese journal of applied physics. 1989, Vol 28, Num 2, pp L166-L168, issn 0021-4922, part 2Article
Thermodynamic optimization in CVD processes involving candidate materials for photovoltaic solar energy conversion and for space applicationBERNARD, C.High Temperatures. High Pressures (Print). 1982, Vol 14, Num 4, pp 377-381, issn 0018-1544Article
Dependence of the direct and indirect gap of AlSb on hydrostatic pressureSTRÖSSNER, K; VES, S; CHUL KOO KIM et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 4044-4053, issn 0163-1829Article
Raman scattering study of longitudinal acoustic and optic phonons in InSb/In1-xAlxSb strained-layer superlatticesGNEZDILOV, V. P; LOCKWOOD, D. J; WEBB, J. B et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 617-620, issn 0038-1101Conference Paper
Γ-X intervalley tunneling in InAs/AlSb resonant tunneling diodesCARNAHAN, R. E; MALDONADO, M. A; MARTIN, K. P et al.Applied physics letters. 1993, Vol 62, Num 12, pp 1385-1387, issn 0003-6951Article
High quantum efficiency InAs/GaInSb/AlSb interband cascade lasersYANG, B. H; YANG, R. Q; ZHANG, D et al.SPIE proceedings series. 1998, pp 324-332, isbn 0-8194-3008-0Conference Paper
New GaSb/AlSb/GaSb/AlSb/InAs/AlSb/InAs triple-barrier interband tunnelling diodeYANG, L; CHEN, J. F; CHO, A. Y et al.Electronics Letters. 1990, Vol 26, Num 16, pp 1277-1279, issn 0013-5194Article
Organometallic vapor phase epitaxial growth of AlAsxSb1-x films using tertiarybutylarsineWEI-KUO CHEN; JEHN OU; WEI-I LEE et al.Japanese journal of applied physics. 1994, Vol 33, Num 3B, pp 402-404, issn 0021-4922, 2Article
Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressureMARKO, Igor P; ADAMS, Alfred R; SWEENEY, Stephen J et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 3, pp 512-515, issn 0370-1972, 4 p.Conference Paper
[InAs3]6+ und [AlSb3]6+, trigonal-planare anionen in Cs6InAs3 und Cs6AlSb3 = [InAs3]6- and [AlSb3]6-, trigonal planar anions in Cs6InAs3 and Cs6AlSb3BLASE, W; CORDIER, G; PETERS, K et al.Angewandte Chemie. 1991, Vol 103, Num 3, pp 335-336, issn 0044-8249Article
Temperature dependence of long-wavelength opical phonons in AlSbRAPTIS, Y. S; ANASTASSAKIS, E.Solid state communications. 1990, Vol 76, Num 3, pp 335-338, issn 0038-1098, 4 p.Article